Datasheet > NSR05T40P2_16

NSR05T40P2_16

更新时间： 2024-02-16 13:51:17

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	61K
描述
500 mA, 40 V Schottky Barrier Diode

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NSR05T40P2_16 数据手册

NSR05T40P2

500 mA, 40 V Schottky

Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

www.onsemi.com

Features

MARKING

DIAGRAM

• Low Forward Voltage Drop − 580 mV (Typ.) @ I = 500 mA

• Low Reverse Current − 2.0 mA (Typ.) @ V = 40 V

• 500 mA of Continuous Forward Current

YKM

SOD−923

• ESD Rating: − Human Body Model: Class 3B

− Charged Device Model: Class IV

• High Switching Speed

CASE 514AB

= Specific Device Code

= Date Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

CATHODE

ANODE

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

ORDERING INFORMATION

Device

Package

Shipping†

MAXIMUM RATINGS

NSR05T40P2T5G SOD−923

2 mm Pitch

Rating

Symbol

Value

Unit

(Pb−Free) 8000/Tape & Reel

Reverse Voltage

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Forward Current (DC)

500

3.0

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

Repetitive Peak Forward Current

1.0

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating: Human Body Model

Charged Device Model

ESD

> 8

> 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

August, 2016 − Rev. 2

NSR05T40P2/D

12 3 4 5

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