Datasheet > NSR05T404MX2T5G

NSR05T404MX2T5G

更新时间： 2024-09-29 11:15:47

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	178K
描述
肖特基势垒二极管，500 mA，40 V

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中文翻译

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数据手册

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NSR05T404MX2T5G 数据手册

Schottky Barrier Diodes,

500 mA, 40 V

NSR05T404MX2

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

www.onsemi.com

Features

MARKING

DIAGRAM

• Low Forward Voltage Drop − 560 mV (Typ.) @ I = 500 mA

• Low Reverse Current − 3.0 mA (Typ.) @ V = 40 V

• 500 mA of Continuous Forward Current

• High Switching Speed

X2DFN2

CASE 714AB

Y M

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

= Specific Device Code

Compliant

= Date Code

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

CATHODE

ANODE

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

ORDERING INFORMATION

†

Device

Package

Shipping

MAXIMUM RATINGS

NSR05T404MX2T5G X2DFN2

2 mm Pitch

8000/Tape &

Reel

Rating

Symbol

Value

Unit

(Pb−Free)

Reverse Voltage

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Forward Current (DC)

500

2.5

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

Repetitive Peak Forward Current

0.6

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating: Human Body Model

Charged Device Model

ESD

> 8

> 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

September, 2020 − Rev. 0

NSR05T404MX/D

12 3 4 5 6

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