Datasheet > NSR05T304MX2T5G

NSR05T304MX2T5G

更新时间： 2023-09-03 20:29:14

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	179K
描述
500 mA, 30 V Schottky Barrier Diode

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NSR05T304MX2T5G 数据手册

Schottky Barrier Diode,

500 mA, 30 V

NSR05T304MX

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

www.onsemi.com

Features

MARKING

DIAGRAM

• Low Forward Voltage Drop − 410 mV (Typ.) @ I = 500 mA

• Low Reverse Current − 35 mA (Typ.) @ V = 30 V

• 500 mA of Continuous Forward Current

• High Switching Speed

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

X2DFN2

CASE 714AB

= Specific Device Code

= Date Code

= Pb−Free Package

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

CATHODE

ANODE

ORDERING INFORMATION

MAXIMUM RATINGS

†

Device

NSR05T304MXT5G

Package

Shipping

Rating

Symbol

Value

Unit

Reverse Voltage

X2DFN2

(Pb−Free)

2 mm Pitch

8000/Tape &

Reel

Forward Current (DC)

500

2.2

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

1.4

FRM

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

November, 2020 − Rev. 0

NSR05T304MX/D

12 3 4 5 6

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