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NSR0620P2T5G PDF预览

NSR0620P2T5G

更新时间: 2024-09-28 05:54:07
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 107K
描述
Schottky Barrier Diode

NSR0620P2T5G 数据手册

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NSR0620P2T5G  
Schottky Barrier Diode  
Schottky barrier diodes are optimized for very low forward voltage  
drop and low leakage current and are used in a wide range of dcdc  
converter, clamping and protection applications in portable devices.  
NSR0620P2 in a SOD923 miniature package enables designers to  
meet the challenging task of achieving higher efficiency and meeting  
reduced space requirements.  
http://onsemi.com  
Features  
20 V SCHOTTKY  
BARRIER DIODE  
Very Low Forward Voltage Drop 350 mV @ 100 mA  
Low Reverse Current 2.0 mA @ 10 V  
Continuous Forward Current 500 mA  
Power Dissipation with Minimum Trace 190 mW  
Very High Switching Speed 4.0 ns @ 10 mA  
Low Capacitance 12 pF @ 1.0 V  
This is a PbFree Device  
1
CATHODE  
2
ANODE  
MARKING  
DIAGRAM  
Typical Applications  
2
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
1
MG  
SOD923  
G
CASE 514AB  
PLASTIC  
1
2
F
M
G
= Specific Device Code  
= Month Code  
= PbFree Package  
Markets  
Mobile Handsets  
MP3 Players  
(Note: Microdot may be in either location)  
Digital Camera and Camcorders  
Notebook PCs & PDAs  
GPS  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
MAXIMUM RATINGS  
NSR0620P2T5G SOD923  
2 mm Pitch  
(PbFree) 8000/Tape & Reel  
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
mA  
Reverse Voltage  
V
R
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Continuous Current (DC)  
I
F
500  
NonRepetitive Peak Forward Surge  
I
1.0  
A
FSM  
Current  
ESD Rating: Human Body Model  
Machine Model  
ESD  
Class 3B  
Class C  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 Rev. 0  
NSR0620P2/D  

NSR0620P2T5G 替代型号

型号 品牌 替代类型 描述 数据表
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