NSR05T30P2
Product Preview
500 mA, 30 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
www.onsemi.com
MARKING
DIAGRAM
Features
2
• Low Forward Voltage Drop − 450 mV (Typ.) @ I = 500 mA
• Low Reverse Current − 40 mA (Typ.) @ V = 30 V
F
1
R
YNM
SOD−923
• 500 mA of Continuous Forward Current
• ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
• High Switching Speed
CASE 514AB
YN
M
= Specific Device Code
= Date Code
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
1
CATHODE
2
ANODE
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
ORDERING INFORMATION
Device
Package
Shipping†
NSR05T30P2T5G SOD−923
2 mm Pitch
MAXIMUM RATINGS
(Pb−Free) 8000/Tape & Reel
Rating
Symbol
Value
30
Unit
V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Reverse Voltage
V
R
Forward Current (DC)
I
F
500
2.5
mA
A
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
Repetitive Peak Forward Current
I
1
A
FRM
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating: Human Body Model
Charged Device Model
ESD
> 8
> 1
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. P2
NSR05T30P2/D