Datasheet > NSR05T40XV2T5G

NSR05T40XV2T5G

更新时间： 2024-11-24 01:16:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	66K
描述
500mA, 40V Schottky Barrier Diode

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NSR05T40XV2T5G 数据手册

NSR05T40XV2

500 mA, 40 V Schottky

Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in spacing saving

micro−packaging ideal for space constraint applications.

www.onsemi.com

Features

MARKING

DIAGRAM

• Low Forward Voltage Drop − 530 mV (Typ.) @ I = 500 mA

• Low Reverse Current − 3.0 mA (Typ.) @ V = 40 V

• 500 mA of Continuous Forward Current

SOD−523

CASE 502

• ESD Rating: − Human Body Model: Class 3B

− Charged Device Model: Class IV

• High Switching Speed

= Specific Device Code

Date Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

CATHODE

ANODE

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

ORDERING INFORMATION

Device

Package

Shipping†

NSR05T40XV2T5G SOD−523

(Pb−Free)

8000 / Tape &

Reel

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Reverse Voltage

Forward Current (DC)

500

3.0

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

Repetitive Peak Forward Current

1.5

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating: Human Body Model

Charged Device Model

ESD

> 8

> 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

February, 2017 − Rev. 1

NSR05T40XV2/D

12 3 4 5

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