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NSR05402NXT5G PDF预览

NSR05402NXT5G

更新时间: 2024-11-20 11:14:15
品牌 Logo 应用领域
安森美 - ONSEMI 功效测试二极管
页数 文件大小 规格书
5页 328K
描述
500 mA,40 V,肖特基势垒二极管,DSN2 (0201)

NSR05402NXT5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DSN2, 2 PINReach Compliance Code:compliant
Factory Lead Time:43 weeks 1 day风险等级:5.73
其他特性:LOW LEAKAGE CURRENT应用:EFFICIENCY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.62 V
JESD-30 代码:R-PBCC-N2湿度敏感等级:1
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.38 W
最大重复峰值反向电压:40 V最大反向电流:20 µA
反向测试电压:40 V表面贴装:YES
技术:SCHOTTKY端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NSR05402NXT5G 数据手册

 浏览型号NSR05402NXT5G的Datasheet PDF文件第2页浏览型号NSR05402NXT5G的Datasheet PDF文件第3页浏览型号NSR05402NXT5G的Datasheet PDF文件第4页浏览型号NSR05402NXT5G的Datasheet PDF文件第5页 
NSR05402  
500 mA, 40 V Schottky  
Barrier Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current and are offered in a Chip Scale  
Package (CSP) to reduce board space. The low thermal resistance  
enables designers to meet the challenging task of achieving higher  
efficiency and meeting reduced space requirements.  
www.onsemi.com  
40 V SCHOTTKY  
BARRIER DIODE  
Features  
Low Forward Voltage Drop 570 mV (Typ.) @ I = 500 mA  
F
Low Reverse Current 3.0 mA (Typ.) @ V = 40 V  
R
1
2
ESD Rating Human Body Model: Class 3B  
ESD Rating Machine Model: Class C  
High Switching Speed  
CATHODE  
ANODE  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
MARKING  
DIAGRAM  
PIN 1  
Typical Applications  
DSN2  
(0201)  
CASE 152AA  
PM  
LCD and Keypad Backlighting  
Camera Photo Flash  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping and Protection  
P
M
= Specific Device Code  
= Date Code  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
NSR05402NXT5G  
Package  
Shipping†  
5000 / Tape & Reel  
Rating  
Symbol  
Value  
40  
Unit  
V
DSN2  
(PbFree)  
Reverse Voltage  
V
R
Forward Current (DC)  
I
F
500  
mA  
A
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Forward Surge Current  
(60 Hz @ 1 cycle)  
I
FSM  
8.0  
1.8  
Repetitive Peak Forward Current  
I
A
FRM  
(Pulse Wave = 1 sec, Duty Cycle = 66%)  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
>8.0  
>400  
kV  
V
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
June, 2019 Rev. 0  
NSR05402/D  

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