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NSR0530HT1G PDF预览

NSR0530HT1G

更新时间： 2024-11-24 01:17:23
品牌 Logo 应用领域
安森美 - ONSEMI 光电二极管
页数 文件大小 规格书
3页 48K
描述
Schottky Barrier Diode

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中文翻译

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NSR0530HT1G 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：8 weeks
风险等级：1.53配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PDSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：0.5 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE最大功率耗散：0.16 W
最大重复峰值反向电压：30 V表面贴装：YES
技术：SCHOTTKY端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
Base Number Matches：1

NSR0530HT1G 数据手册

 浏览型号NSR0530HT1G的Datasheet PDF文件第2页浏览型号NSR0530HT1G的Datasheet PDF文件第3页 
NSR0530H  
Product Preview  
Schottky Barrier Diode  
Schottky barrier diodes are optimized for very low forward voltage  
drop and low leakage current and are used in a wide range of dc−dc  
converter, clamping and protection applications in portable devices.  
NSR0530H in a SOD−323 miniature package enables designers to  
meet the challenging task of achieving higher efficiency and meeting  
reduced space requirements.  
www.onsemi.com  
30 V SCHOTTKY  
BARRIER DIODE  
Features  
• Very Low Forward Voltage Drop − 370 mV @ 100 mA  
• Low Reverse Current − 1.4 mA @ 10 V VR  
• 500 mA of Continuous Forward Current  
• Very High Switching Speed  
• Low Capacitance − CT = 10 pF  
• This is a Pb−Free Device  
1
2
CATHODE  
ANODE  
MARKING  
2
Typical Applications  
DIAGRAM  
• LCD and Keypad Backlighting  
• Camera Photo Flash  
• Buck and Boost dc−dc Converters  
• Reverse Voltage and Current Protection  
• Clamping & Protection  
1
Z M  
SOD−323  
CASE 477  
STYLE 1  
Z
M
= Specific Device Code  
= Month Code  
Markets  
• Mobile Handsets  
• MP3 Players  
ORDERING INFORMATION  
• Digital Camera and Camcorders  
• Notebook PCs & PDAs  
• GPS  
Device  
NSR0530HT1G  
Package  
Shipping†  
SOD−323 3000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
Reverse Voltage  
Symbol  
Value  
30  
Unit  
V
V
R
Forward Current (DC)  
I
F
500  
mA  
ESD Rating: Human Body Model  
Machine Model  
ESD  
Class 3B  
Class C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
May, 2015 − Rev. P0  
NSR0530H/D  
123

中文翻译

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