Datasheet > NSR05301MX4T5G

NSR05301MX4T5G

更新时间： 2024-11-24 11:11:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	166K
描述
500 mA, 30 V, Trench-based Schottky Diode in X4DFN2 (01005)

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NSR05301MX4T5G 数据手册

Trench-based Schottky

Diode, 500 mA, 30 V

NSR05301MX4

These Schottky diodes are optimized for low forward voltage drop

and low leakage current that offers the most optimal power dissipation

in applications. They are housed in space saving micro−packaging

ideal for space constrained applications.

www.onsemi.com

Features

• Smallest Package Available (01005); 0.445mm x 0.24mm

• 500 mA of Continuous Forward Current

CATHODE

ANODE

• Low Forward Voltage Drop − 430 mV (Typical) @ I = 200 mA

• Low Reverse Current − 25 mA (Typical) @ V = 30 V

MARKING

DIAGRAM

• Low Reverse Recovery Time − 9 ns Typical

• Low Capacitance − 19 pF Typical

X4DFN2

CASE 718AA

Typical Applications

• Mobile and Wearable Devices

• LED Boost Converters

D = Specific Device Code

M = Date Code

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

ORDERING INFORMATION

Device

Package

Shipping†

NSR05301MX4T5G X4DFN2

10000 /

Tape & Reel

MAXIMUM RATINGS

(Pb−Free)

Rating

Forward Current (DC)

Symbol

Value

500

Unit

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Reverse Voltage

Repetitive Peak Forward Current

(Pulse Wave = 1 sec, Duty Cycle = 66%)

1.0

FRM

ESD Rating:

Human Body Model

Machine Model

ESD

>8.0

>400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

October, 2020 − Rev. 1

NSR05301/D

12 3 4 5

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