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NSR0340P2T5G PDF预览

NSR0340P2T5G

更新时间： 2024-01-29 09:04:33
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 107K
描述
Schottky Barrier Diode

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中文翻译

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NSR0340P2T5G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：LEAD FREE, MINIATURE, PLASTIC, CASE 514AB-01, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.73
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODEJESD-30 代码：R-PDSO-F2
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：2
最大输出电流：0.2 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED最大功率耗散：0.57 W
认证状态：COMMERCIAL最大反向恢复时间：0.003 µs
表面贴装：YES技术：SCHOTTKY
端子面层：TIN端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

NSR0340P2T5G 数据手册

 浏览型号NSR0340P2T5G的Datasheet PDF文件第2页浏览型号NSR0340P2T5G的Datasheet PDF文件第3页浏览型号NSR0340P2T5G的Datasheet PDF文件第4页 
NSR0340P2T5G  
Schottky Barrier Diode  
Schottky barrier diodes are optimized for very low forward voltage  
drop and low leakage current and are used in a wide range of dc−dc  
converter, clamping and protection applications in portable devices.  
NSR0340P2 in a SOD−923 miniature package enables designers to  
meet the challenging task of achieving higher efficiency and meeting  
reduced space requirements.  
http://onsemi.com  
Features  
40 V SCHOTTKY  
BARRIER DIODE  
• Very Low Forward Voltage Drop − 420 mV @ 100 mA  
• Low Reverse Current − 0.6 mA @ 10 V  
• Continuous Forward Current − 200 mA  
• Power Dissipation with Minimum Trace − 190 mW  
• Very High Switching Speed − 3.0 ns @ 10 mA  
• Low Capacitance − 4 pF @ 5.0 V  
1
CATHODE  
2
ANODE  
• This is a Pb−Free Device  
MARKING  
DIAGRAM  
Typical Applications  
2
• LCD and Keypad Backlighting  
• Camera Photo Flash  
• Buck and Boost dc−dc Converters  
• Reverse Voltage and Current Protection  
• Clamping & Protection  
1
MG  
SOD−923  
CASE 514AB  
PLASTIC  
G
1
2
R
M
G
= Specific Device Code  
= Month Code  
Markets  
= Pb−Free Package  
• Mobile Handsets  
• MP3 Players  
(Note: Microdot may be in either location)  
• Digital Camera and Camcorders  
• Notebook PCs & PDAs  
• GPS  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
NSR0340P2T5G SOD−923  
2 mm Pitch  
MAXIMUM RATINGS  
(Pb−Free) 8000 / Tape & Reel  
Rating  
Reverse Voltage  
Symbol  
Value  
40  
Unit  
V
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
V
I
R
Forward Current (DC)  
200  
1.0  
mA  
A
F
Non−Repetitive Peak Forward Surge  
I
FSM  
Current  
ESD Rating: Human Body Model  
Machine Model  
ESD  
Class 2  
Class A  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
©
Semiconductor Components Industries, LLC, 2008  
1
Publication Order Number:  
July, 2008 − Rev. 0  
NSR0340P2/D  
1234

中文翻译

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NSR0340P2T5G 替代型号

型号 品牌 替代类型 描述 数据表
MMBD7000LT1G ONSEMI

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BAS21LT1G ONSEMI

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BAV99WT1G ONSEMI

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