Datasheet > NSR0320XV6T1_07

NSR0320XV6T1_07

更新时间： 2024-09-24 02:53:03

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
4页	43K
描述
Schottky Barrier Diode

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NSR0320XV6T1_07 数据手册

NSR15ADXV6T1,

NSR15ADXV6T5

Dual RF

Schottky Diode

These diodes are designed for analog and digital applications,

including DC based signal detection and mixing applications.

http://onsemi.com

Features

• Low Capacitance (<1.0 pF)

RF SCHOTTKY

BARRIER DIODES

15 VOLTS, 30 mA

• Low V (390 mV Typical @ 1.0 mA)

• Low V (1.0 mV Typical @ 1.0 mA)

• These are Pb−Free Devices

Benefits

• Reduced Parasitic Losses

• Accurate Signal Measurement

MAXIMUM RATINGS

Rating

Peak Reverse Voltage

Symbol

Max

Unit

Forward Current

°C

Operating and Storage

Temperature Range

T , T

−65 to

+150

MARKING

DIAGRAM

stg

ESD Rating:

Class 1 per Human Body Model

Class A per Machine Model

5RD

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

SOT−563

CASE 463A

5R = Specific Device Code

= Date Code

ORDERING INFORMATION

†

Device

Package

Shipping

NSR15ADXV6T1 SOT−563

4 mm pitch

4000 / Tape & Reel

NSR15ADXV6T5 SOT−563

2 mm pitch

8000 / Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 3

NSR15ADXV6T1/D

12 3 4

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