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NSR0320MW2T3G PDF预览

NSR0320MW2T3G

更新时间: 2024-02-04 05:20:58
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 44K
描述
Schottky Barrier Diodes

NSR0320MW2T3G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 477-02, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:1 week
风险等级:1.24配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.27 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:5 A元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.2 W认证状态:Not Qualified
最大重复峰值反向电压:23 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NSR0320MW2T3G 数据手册

 浏览型号NSR0320MW2T3G的Datasheet PDF文件第2页浏览型号NSR0320MW2T3G的Datasheet PDF文件第3页浏览型号NSR0320MW2T3G的Datasheet PDF文件第4页 
NSR0320MW2T1  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high current,  
handling capability, and low forward voltage performance.  
Features  
Low Forward Voltage − 0.24 Volts (Typ) @ I = 10 mAdc  
F
http://onsemi.com  
High Current Capability  
ESD Rating − Human Body Model: CLASS 3B  
− Machine Model: C  
HIGH CURRENT  
SCHOTTKY BARRIER DIODE  
Pb−Free Packages are Available  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
V
1
2
V
R
CATHODE  
ANODE  
Peak Revese Voltage  
V
RM  
23  
Forward Power Dissipation  
P
F
@ T = 25°C  
200  
2.0  
mW  
mW/°C  
2
A
MARKING  
DIAGRAM  
Derate above 25°C  
Forward Current (DC)  
Continuous  
I
A
A
F
1
1
RD MG  
SOD−323  
CASE 477  
STYLE 1  
Forward Current  
I
F
G
t = 8.3 ms Half Sinewave  
5
Junction Temperature  
T
125 Max  
55 to +150  
°C  
°C  
J
RD = Specific Device Code  
Storage Temperature Range  
T
stg  
M
= Date Code  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
G
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping†  
NSR0320MW2T1 SOD−323 3000/Tape & Reel  
NSR0320MW2T1G SOD−323 3000/Tape & Reel  
(Pb−Free)  
NSR0320MW2T3G SOD−323 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2005  
Publication Order Number:  
October, 2005 − Rev. 1  
NSR0320MW2T1/D  

NSR0320MW2T3G 替代型号

型号 品牌 替代类型 描述 数据表
NSR0320MW2T1G ONSEMI

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Schottky Barrier Diodes

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