Datasheet > NSR02L30NXT5G_10

NSR02L30NXT5G_10

更新时间： 2024-01-07 20:56:10

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
4页	84K
描述
Schottky Barrier Diode

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NSR02L30NXT5G_10 数据手册

NSR02L30NXT5G

Schottky Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current. The DSN2 (Dual Silicon

No−lead) package is a chip level package using solderable metal

contacts under the package similar to DFN style packages. The DSN

style package enables 100% utilization of the package area for active

silicon, offering a significant performance per board area advantage

compared to products in plastic molded packages. The low thermal

resistance enables designers to meet the challenging task of achieving

higher efficiency and meeting reduced space requirements.

http://onsemi.com

30 V SCHOTTKY

BARRIER DIODE

Features

• Very Low Forward Voltage Drop − 400 mV @ 10 mA

• Low Reverse Current − 0.20 mA @ 10 V VR

CATHODE

ANODE

• 200 mA of Continuous Forward Current

• Power Dissipation of 312 mW with Minimum Trace

• ESD Rating − Human Body Model: Class 3B

ESD Rating − Machine Model: Class C

• Very High Switching Speed

MARKING

DIAGRAM

PIN 1

DSN2

(0201)

CASE 152AA

I230

YYY

• Low Capacitance − CT = 7 pF

• This is a Halide−Free Device

• This is a Pb−Free Device

I230

YYY

= Specific Device Code

= Year Code

Typical Applications

• LCD and Keypad Backlighting

• Camera Photo Flash

ORDERING INFORMATION

Device

NSR02L30NXT5G

Package

Shipping†

5000 / Tape & Reel

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping & Protection

DSN2

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Markets

• Mobile Handsets

• MP3 Players

• Digital Camera and Camcorders

• Notebook PCs & PDAs

• GPS

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

Forward Current (DC)

Forward Surge Current

200

FSM

(60 Hz @ 1 cycle)

4.0

ESD Rating:

Human Body Model

Machine Model

ESD

>8.0

>400

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

September, 2010 − Rev. 2

NSR02L30/D

12 3 4

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