Datasheet > NSR02F30MX

NSR02F30MX

更新时间： 2024-09-25 01:21:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	97K
描述
Schottky Barrier Diode

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中文翻译

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NSR02F30MX 数据手册

NSR02F30MX

200 mA, 30 V Schottky

Barrier Diode

These Schottky barrier diodes are optimized for low forward

voltage drop and low leakage current that offers the most optimal

power dissipation in applications. They are housed in a spacing saving

x3DFN 0201 package ideal for space constraint applications.

www.onsemi.com

Features

• Low Forward Voltage Drop − 500 mV (Typ.) @ I = 200 mA

• Low Reverse Current – 20 mA (Typ.) @ V = 30 V

Cathode

Anode

• 200 mA of Continuous Forward Current

• ESD Rating − Human Body Model: Class 2

− Machine Model: Class M3

− CDM: Class IV

MARKING

DIAGRAM

• High Switching Speed

PIN 1

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

X3DFN2

CASE 152AF

Typical Applications

= Specific Device Code

= (Rotated 180°)

= Month Code

• LCD and Keypad Backlighting

• Camera Photo Flash

• Buck and Boost dc−dc Converters

• Reverse Voltage and Current Protection

• Clamping and Protection

ORDERING INFORMATION

Device

NSR02F30MXT5G

Package

Shipping†

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

X3DFN

(Pb−Free)

10000 / Tape &

Reel

Reverse Voltage

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Forward Current (DC)

200

Forward Surge Current

(60 Hz @ 1 cycle)

FSM

Repetitive Peak Forward Current

FRM

(Pulse Wave = 1 sec, Duty Cycle = 66%)

ESD Rating: Human Body Model

Machine Model

ESD

2 − 4

>400

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

Publication Order Number:

April, 2016 − Rev. 1

NSR02F30MX/D

12 3 4

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