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NSR01L30NXT5G PDF预览

NSR01L30NXT5G

更新时间: 2024-11-25 05:54:07
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
4页 106K
描述
Schottky Barrier Diode

NSR01L30NXT5G 数据手册

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NSR01L30NXT5G  
Schottky Barrier Diode  
These Schottky barrier diodes are optimized for low forward  
voltage drop and low leakage current. The DSN2 (Dual Silicon  
Nolead) package is a chip level package using solderable metal  
contacts under the package similar to DFN style packages. The DSN  
style package enables 100% utilization of the package area for active  
silicon, offering a significant performance per board area advantage  
compared to products in plastic molded packages. The low thermal  
resistance enables designers to meet the challenging task of achieving  
higher efficiency and meeting reduced space requirements.  
http://onsemi.com  
30 V SCHOTTKY  
BARRIER DIODE  
Features  
1
2
Very Low Forward Voltage Drop 400 mV @ 10 mA  
Low Reverse Current 0.2 mA @ 10 V VR  
100 mA of Continuous Forward Current  
ESD Rating Human Body Model: Class 3B  
ESD Rating Machine Model: Class C  
Power Dissipation of 312 mW with Minimum Trace  
Very High Switching Speed  
CATHODE  
ANODE  
MARKING  
DIAGRAM  
PIN 1  
DSN2  
(0201)  
XXXX  
YYY  
CASE 152AA  
Low Capacitance CT = 7 pF  
This is a HalideFree Device  
This is a PbFree Device  
XXXX  
YYY  
= Specific Device Code  
= Year Code  
Typical Applications  
LCD and Keypad Backlighting  
Camera Photo Flash  
ORDERING INFORMATION  
Device  
NSR01L30NXT5G  
Package  
Shipping†  
5000 / Tape & Reel  
Buck and Boost dcdc Converters  
Reverse Voltage and Current Protection  
Clamping & Protection  
DSN2  
(PbFree)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Markets  
Mobile Handsets  
MP3 Players  
Digital Camera and Camcorders  
Notebook PCs & PDAs  
GPS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
30  
Unit  
V
Reverse Voltage  
V
R
Forward Current (DC)  
Forward Surge Current  
I
100  
mA  
A
F
I
FSM  
(60 Hz @ 1 cycle)  
4.0  
ESD Rating:  
Human Body Model  
Machine Model  
ESD  
8.0  
400  
kV  
V
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 Rev. 0  
NSR01L30/D  

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