Datasheet > NSR023D

NSR023D

更新时间： 2024-01-10 05:06:03

品牌	Logo	应用领域
安森美 - ONSEMI		肖特基二极管
页数	文件大小	规格书
4页	42K
描述
Schottky Barrier Diode

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NSR023D 数据手册

NSR0230M2T5G

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed

switching applications, circuit protection, and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature

surface mount package is excellent for hand−held and portable

applications where space is limited.

http://onsemi.com

• Extremely Fast Switching Speed

• Extremely Low Forward Voltage 0.325 V (max) @ I = 10 mA

30 V SCHOTTKY

BARRIER DIODE

• Low Reverse Current

• This is a Pb−Free Device

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Vdc

CATHODE

ANODE

Reverse Voltage

200

1.0

Forward Current DC

Forward Current Surge Peak

(60 Hz, 1 cycle)

FSM

MARKING

DIAGRAM

ESD Rating: Class 3B per Human Body Model

ESD Rating: Class C per Machine Model

7C MG

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOD−723

CASE 509AA

PLASTIC

7C = Specific Device Code

THERMAL CHARACTERISTICS

= Month Code

Characteristic

Symbol

Max

Unit

= Pb−Free Package

(Note: Microdot may be in either location)

Total Device Dissipation FR−5 Board,

200

(Note 1) T = 25°C

Derate above 25°C

2.0

mW/°C

°C/W

°C

Thermal Resistance, Junction−to−Ambient

600

ORDERING INFORMATION

Junction and Storage

Temperature Range

T , T

−55 to

+125

stg

Device

Package

Shipping†

NSR0230M2T5G SOD−723

2 mm Pitch

8000/Tape & Reel

1. FR−5 Minimum Pad.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Characteristic

Symbol Min Typ

Max Unit

Reverse Leakage

−

(V = 10 V)

Forward Voltage

Vdc

(I = 10 mA)

−

0.325

0.500

(I = 200 mA)

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 0

NSR0230/D

12 3 4

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