Datasheet > NSD8306-Q1HTSXR

NSD8306-Q1HTSXR

更新时间： 2024-04-09 18:58:34

品牌	Logo	应用领域
纳芯微 - NOVOSENSE		电机驱动继电器
页数	文件大小	规格书
48页	2826K
描述
NSD8306 – Q1是一款多通道半桥驱动芯片，内部集成6通道半桥，通过灵活配置，芯片可以支持多种不同的负载类型包括直流有刷电机，步进电机，继电器和LED等。该芯片内置PWM生成器，仅通过SPI

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NSD8306-Q1HTSXR 数据手册

Datasheet (EN) 1.3

NSD8306-Q1/NSD8306A-Q1

C_OUT

Output capacitance

Specified by design

HALF BRIDGE OUTPUS (OUT1, OUT2, OUT3, OUT4, OUT5, OUT6)

I = 0.5 A, Tj = 25°C

0.85

1.2

Ω

High-side or Low-side

R_DS(ON)

FET on resistance

I = 0.5 A, Tj = 150°C

1.6

Ω

VOUTx = 0V, EN = 1

-2

-1

I_{LEAK_HS}

HS OFF-state leakage

LS OFF-state leakage

VOUTx = 0V, EN = 0

VOUTx = 13.5V, EN = 1, -40≤Tj≤85°C

VOUTx = 13.5V, EN = 1, -40≤Tj≤150°C

VOUTx = 13.5V, EN = 0, -40≤Tj≤85°C

VOUTx = 13.5V, EN = 0, -40≤Tj≤150°C

I_{LEAK_LS}

VM = 13.5 V, resistive load 100 ohm,

HBx_SR = 0

0.6

2.5

V/μs

Output rise time

Output fall time

t_RISE

t_FALL

VM = 13.5 V, resistive load 100 ohm,

HBx_SR = 1

High side or low side

Propagation delay

(high side / low side

ON/OFF)

HBx_SR = 0

HBx_SR = 1

μs

t_PD

Cross protection time, HBx_SR = 0

high to low / low to

high

t_DEAD

HBx_SR = 1

OVERCURRENT PROTECTION

Half bridge low side

Half bridge high side

OC_Filter bit = 000

OC_Filter bit = 001

OC_Filter bit = 010

OC_Filter bit = 011

OC_Filter bit = 100

OC_Filter bit = 101

OC_Filter bit = 110

OC_Filter bit = 111

1.6

-1

I_OC

Over current threshold

-1.6

2.5

t_OC

OC deglitch filter time

µs

ON STATE OPEN LOAD DIAGNOSIS

Page 7

1...4 5 678 9 10...48

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