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NSD914F3T5G PDF预览

NSD914F3T5G

更新时间: 2024-01-26 18:52:25
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关
页数 文件大小 规格书
4页 118K
描述
High-Speed Switching Diode

NSD914F3T5G 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:SOT-1123包装说明:LEAD FREE, SOT-1123, CASE 524AA-01, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.7配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.347 W认证状态:COMMERCIAL
最大重复峰值反向电压:100 V最大反向恢复时间:0.004 µs
表面贴装:YES端子面层:TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NSD914F3T5G 数据手册

 浏览型号NSD914F3T5G的Datasheet PDF文件第2页浏览型号NSD914F3T5G的Datasheet PDF文件第3页浏览型号NSD914F3T5G的Datasheet PDF文件第4页 
NSD914F3T5G  
High-Speed Switching  
Diode  
The NSD914F3T5G device is a spinoff of our popular SOT23  
threeleaded device. It is designed for high speed switching  
applications and is housed in the SOT1123 surface mount package.  
This device is ideal for lowpower surface mount applications where  
board space is at a premium.  
http://onsemi.com  
Features  
3
CATHODE  
1
ANODE  
Reduces Board Space  
This is a HalideFree Device  
This is a PbFree Device  
NSD914F3T5G  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
2
Reverse Voltage  
Forward Current  
V
R
1
I
200  
mAdc  
mAdc  
SOT1123  
CASE 524AA  
STYLE 2  
F
Peak Forward Surge Current  
THERMAL CHARACTERISTICS  
Characteristic  
I
500  
FM(surge)  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
290  
2.3  
mW  
mW/°C  
A
D
(Note 1)  
R M  
Thermal Resistance,  
R
432  
°C/W  
JA  
JunctiontoAmbient  
(Note 1)  
R
M
= Device Code  
= Date Code  
Total Device Dissipation, T = 25°C  
Derate above 25°C  
P
347  
2.8  
mW  
mW/°C  
A
D
(Note 2)  
Thermal Resistance,  
JunctiontoAmbient  
R
360  
°C/W  
°C/W  
°C  
JA  
(Note 2)  
ORDERING INFORMATION  
Thermal Resistance,  
JunctiontoLead 3  
R
143  
JL  
Device  
NSD914F3T5G  
Package  
Shipping  
(Note 2)  
SOT1123 8000/Tape & Reel  
(PbFree)  
Junction and Storage Temperature Range  
T , T  
J
55 to  
+150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
2
2
1. 100 mm 1 oz, copper traces.  
2. 500 mm 1 oz, copper traces.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
January, 2009 Rev. 0  
NSD914F3/D  
 

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