NSD914F3T5G
High-Speed Switching
Diode
The NSD914F3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high speed switching
applications and is housed in the SOT−1123 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
http://onsemi.com
Features
3
CATHODE
1
ANODE
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
NSD914F3T5G
MAXIMUM RATINGS
3
Rating
Symbol
Value
100
Unit
Vdc
2
Reverse Voltage
Forward Current
V
R
1
I
200
mAdc
mAdc
SOT−1123
CASE 524AA
STYLE 2
F
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
I
500
FM(surge)
Symbol
Max
Unit
MARKING DIAGRAM
Total Device Dissipation, T = 25°C
Derate above 25°C
P
290
2.3
mW
mW/°C
A
D
(Note 1)
R M
Thermal Resistance,
R
ꢀ
432
°C/W
JA
Junction−to−Ambient
(Note 1)
R
M
= Device Code
= Date Code
Total Device Dissipation, T = 25°C
Derate above 25°C
P
347
2.8
mW
mW/°C
A
D
(Note 2)
Thermal Resistance,
Junction−to−Ambient
R
360
°C/W
°C/W
°C
ꢀ
JA
(Note 2)
ORDERING INFORMATION
Thermal Resistance,
Junction−to−Lead 3
R
ꢁ
143
JL
†
Device
NSD914F3T5G
Package
Shipping
(Note 2)
SOT−1123 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature Range
T , T
J
−55 to
+150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
2
2
1. 100 mm 1 oz, copper traces.
2. 500 mm 1 oz, copper traces.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
January, 2009 − Rev. 0
NSD914F3/D