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NSDEMN11XV6T1 PDF预览

NSDEMN11XV6T1

更新时间: 2024-02-01 08:59:38
品牌 Logo 应用领域
安森美 - ONSEMI 二极管开关测试光电二极管
页数 文件大小 规格书
6页 54K
描述
Common Cathode Quad Array Switching Diode

NSDEMN11XV6T1 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.71
配置:2 BANKS, COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.2 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:4
端子数量:6最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W认证状态:Not Qualified
最大重复峰值反向电压:80 V最大反向电流:0.1 µA
最大反向恢复时间:0.004 µs反向测试电压:70 V
子类别:Signal Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

NSDEMN11XV6T1 数据手册

 浏览型号NSDEMN11XV6T1的Datasheet PDF文件第2页浏览型号NSDEMN11XV6T1的Datasheet PDF文件第3页浏览型号NSDEMN11XV6T1的Datasheet PDF文件第4页浏览型号NSDEMN11XV6T1的Datasheet PDF文件第5页浏览型号NSDEMN11XV6T1的Datasheet PDF文件第6页 
NSDEMN11XV6T1,  
NSDEMN11XV6T5  
Common Cathode Quad  
Array Switching Diode  
This Common Cathode Epitaxial Planar Quad Diode is designed for  
use in ultra high speed switching applications. This device is housed in  
the SOT-563 package which is designed for low power surface mount  
applications, where board space is at a premium.  
http://onsemi.com  
(2)  
(3)  
(1)  
Fast t  
rr  
Low C  
D
Available in 8 mm; 7 Inch Tape and Reel  
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Reverse Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
(4)  
(5)  
(6)  
V
R
Peak Reverse Voltage  
Forward Current  
V
80  
Vdc  
RM  
MARKING  
DIAGRAM  
4
5
6
I
100  
300  
2.0  
mAdc  
mAdc  
Adc  
F
3
Peak Forward Current  
Peak Forward Surge Current  
I
2
1
FM  
I
FSM  
SOT-563  
CASE 463A  
PLASTIC  
N9 D  
(Note 1)  
1. t = 1  
Sm  
THERMAL CHARACTERISTICS  
N9 = Specific Device Code  
= Date Code  
D
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
A
P
D
357  
(Note 2)  
2.9  
mW  
ORDERING INFORMATION  
Derate above 25°C  
mW/°C  
Device  
Package  
Shipping  
(Note 2)  
Thermal Resistance Junction-to-Ambient  
R
350  
(Note 2)  
°C/W  
NSDEMN11XV6T1  
SOT-563  
4 mm pitch  
4000/Tape & Reel  
q
JA  
Characteristic  
(Both Junctions Heated)  
NSDEMN11XV6T5  
SOT-563  
2 mm pitch  
8000/Tape & Reel  
Symbol  
Max  
Unit  
Total Device Dissipation  
T = 25°C  
P
500  
(Note 2)  
4.0  
mW  
A
D
Derate above 25°C  
mW/°C  
°C/W  
°C  
(Note 2)  
Thermal Resistance Junction-to-Ambient  
Junction and Storage Temperature  
2. FR-4 @ Minimum Pad  
R
250  
(Note 2)  
q
JA  
T , T  
J
- 55 to  
+150  
stg  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
February, 2003 - Rev. 1  
NSDEMN11XV6T1/D  

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