Datasheet > NSDP301MX2WT5G

NSDP301MX2WT5G

更新时间： 2023-09-03 20:36:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	188K
描述
Single PIN Diode for Attenuator and RF Switch

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中文翻译

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NSDP301MX2WT5G 数据手册

DATA SHEET

www.onsemi.com

80 V, 100 mA

rs = 1.3 W typ.

PIN Diode

Single PIN Diode for

Attenuator and RF Switch

PIN Diode

NSDP301MX2W,

NSVDP301MX2W

CATHODE

ANODE

Low rs characteristics is enable to use high frequency applications.

This PIN diode is designed to realize compact and efficient designs.

NSDP301MX2W in a X2DFNW2 miniature package enables

designers to meet the challenging task of achieving higher efficiency

and meeting reduced space requirements. In addition, wettable flank

package improves the quality at mounted to PCB.

X2DFNW2

CASE 711BG

MARKING DIAGRAM

Features

• Low Series Resistance (r = 1.3 W typ.)

RGM

• Small Interterminal Capacitance (C = 0.33 pF typ.)

• Less Parasitic Components

RG = Specific Device Code

• Small−sized Package

• Wettable Flank Package

= Date Code

• NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free and are RoHS Compliant

ORDERING INFORMATION

†

Device

NSDP301MX2WT5G

Package

Shipping

X2DFNW2

8000 /

(Pb−Free)

Tape & Reel

Typical Applications

• RF Attenuator

• RF Switch

NSVDP301MX2WT5G X2DFNW2

8000 /

Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

MAXIMUM RATINGS (T = 25°C)

Parameter

Reverse Voltage

Symbol

Value

Unit

Forward Current

100

°C

Operating Junction and Storage

Temperature Range

T , T

−55 to +150

stg

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Parameter

Reverse Voltage

Symbol

Conditions

Min

Typ

Max

Unit

= 1 mA

Reverse Current

= 80 V

Forward Voltage

I = 1 mA

0.78

1.3

0.81

Series Resistance

Interterminal Capacitance

I = 10 mA, f = 100 MHz

= 0 V, f = 1 MHz

0.33

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Publication Order Number:

April, 2022 − Rev. 2

NSDP301MX2W/D

12 3 4 5

中文翻译

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与NSDP301MX2WT5G相关器件

型号	品牌	获取价格	描述	数据表
NSDP301MX3T5G	ONSEMI	获取价格	Single PIN Diode for Attenuator and RF Switch
NSDU01	NSC	获取价格	TRANSISTOR 1 A, 30 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
NSDU01A	TI	获取价格	NSDU01A
NSDU01A	NSC	获取价格	TRANSISTOR,BJT,NPN,40V V(BR)CEO,2A I(C),TO-202AA
NSDU02	TI	获取价格	TRANSISTOR,BJT,NPN,40V V(BR)CEO,2A I(C),TO-202
NSDU05	NSC	获取价格	TRANSISTOR 1.5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
NSDU06	TI	获取价格	NSDU06
NSDU07	TI	获取价格	TRANSISTOR 1 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power
NSDU45	TI	获取价格	1A, 40V, NPN, Si, POWER TRANSISTOR, TO-202
NSDU45	NSC	获取价格	TRANSISTOR 1 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-202, BIP General Purpose Power

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