Datasheet > NSBC113EF3T5G

NSBC113EF3T5G

更新时间： 2024-09-17 12:01:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
12页	144K
描述
Digital Transistors (BRT) R1 = 1 kOhm, R2 = 1 kOhn

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中文翻译

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数据手册

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NSBC113EF3T5G 数据手册

MUN2230, MMUN2230L,

MUN5230, DTC113EE,

DTC113EM3, NSBC113EF3

Digital Transistors (BRT)

R1 = 1 kW, R2 = 1 kW

http://onsemi.com

PIN CONNECTIONS

NPN Transistors with Monolithic Bias

Resistor Network

PIN 3

COLLECTOR

(OUTPUT)

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

MARKING DIAGRAMS

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

SC−59

CASE 318D

STYLE 1

XX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

SOT−23

CASE 318

STYLE 6

XXX MG

MAXIMUM RATINGS (T = 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

SC−70/SOT−323

CASE 419

XX MG

CBO

CEO

STYLE 3

Vdc

100

mAdc

Vdc

SC−75

CASE 463

STYLE 1

IN(fwd)

XX M

Input Reverse Voltage

IN(rev)

Vdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

X M

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

February, 2013 − Rev. 1

DTC113E/D

12 3 4 5 6 7...12

中文翻译

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与NSBC113EF3T5G相关器件

型号	品牌	获取价格	描述	数据表
NSBC113EPDXV6T1	ROCHESTER	获取价格	100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6
NSBC113EPDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDP6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114EDP6T5G	ONSEMI	获取价格	Dual Digital Transistors (BRT)
NSBC114EDXV6	ONSEMI	获取价格	Dual NPN Bias Resistor Transistors
NSBC114EDXV6/D	ETC	获取价格	Dual Bias Resistor Transistor
NSBC114EDXV6_06	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSBC114EDXV6T5	ONSEMI	获取价格	Dual Bias Resistor Transistors

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