Datasheet > NP82N055CHE_07

NP82N055CHE_07

更新时间： 2024-11-29 03:46:07

品牌	Logo	应用领域
日电电子 - NEC		晶体开关晶体管场效应晶体管
页数	文件大小	规格书
10页	207K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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中文翻译

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NP82N055CHE_07 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP82N055EHE, NP82N055KHE

NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

<R>

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Pure Sn (Tin)

PACKING

PACKAGE

NP82N055EHE-E1-AY ^{Note1, 2}

NP82N055EHE-E2-AY ^{Note1, 2}

NP82N055KHE-E1-AY ^Note1

NP82N055KHE-E2-AY ^Note1

NP82N055CHE-S12-AZ ^{Note1, 2}

NP82N055DHE-S12-AY ^{Note1, 2}

NP82N055MHE-S18-AY ^Note1

NP82N055NHE-S18-AY ^Note1

TO-263 (MP-25ZJ) typ. 1.4 g

Tape 800 p/reel

TO-263 (MP-25ZK) typ. 1.5 g

Sn-Ag-Cu

TO-220 (MP-25) typ. 1.9 g

TO-262 (MP-25 Fin Cut) typ. 1.8 g

TO-220 (MP-25K) typ. 1.9 g

TO-262 (MP-25SK) typ. 1.8 g

Tube 50 p/tube

Pure Sn (Tin)

Notes 1. Pb-free (This product does not contain Pb in the external electrode.)

2. Not for new design

(TO-220)

FEATURES

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)= 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)

• Low input capacitance

(TO-262)

C^iss= 3500 pF TYP.

• Built-in gate protection diode

(TO-263)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D14138EJ6V0DS00 (6th edition)

Date Published October 2007 NS

Printed in Japan

1999, 2007

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...10

中文翻译

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与NP82N055CHE_07相关器件

型号	品牌	获取价格	描述	数据表
NP82N055CHE-AZ	NEC	获取价格	暂无描述
NP82N055CHE-S12-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055CLE	RENESAS	获取价格	82A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
NP82N055CLE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055CLE-AZ	RENESAS	获取价格	Power Field-Effect Transistor, 82A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
NP82N055CLE-S12-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055DHE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING
NP82N055DHE	RENESAS	获取价格	82A, 55V, 0.0086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, 3 PIN
NP82N055DHE-AZ	RENESAS	获取价格	82A, 55V, 0.0086ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, 3 PIN
NP82N055DHE-S12-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET