生命周期: | Obsolete | 包装说明: | LEAD FREE, MP-25, TO-262, 3 PIN |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 289 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 55 V | 最大漏极电流 (ID): | 82 A |
最大漏源导通电阻: | 0.011 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 300 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP82N055EHE | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING | |
NP82N055EHE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP82N055EHE-E2-AY | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP82N055ELE | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP82N055ELE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP82N055ELE-E2-AY | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET | |
NP82N055KHE | NEC |
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MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING | |
NP82N055KHE | RENESAS |
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Product Scout Automotive | |
NP82N055KHE-AZ | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,82A I(D),TO-263AB | |
NP82N055KHE-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |