Datasheet > NP82N055KLE-AY

NP82N055KLE-AY

更新时间： 2024-09-29 09:18:11

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	81K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,82A I(D),TO-263AB

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技术参数
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NP82N055KLE-AY 技术参数

是否Rohs认证：	符合	生命周期：	End Of Life
Reach Compliance Code：	compliant	风险等级：	5.76
配置：	Single	最大漏极电流 (Abs) (ID)：	82 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	163 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

NP82N055KLE-AY 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

NP82N055CLE,NP82N055DLE,NP82N055ELE,NP82N055KLE

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

ORDERING INFORMATION

These products are N-channel MOS Field Effect

Transistor designed for high current switching

applications.

PART NUMBER

NP82N055CLE

NP82N055DLE

NP82N055ELE

NP82N055KLE

PACKAGE

TO-220AB

TO-262

TO-263 (MP-25ZJ)

TO-263 (MP-25ZK)

FEATURES

★

• Channel temperature 175 degree rated

• Super low on-state resistance

R^DS(on)1= 8.4 mΩ MAX. (V^GS= 10 V, I^D= 41 A)

R^DS(on)2= 11 mΩ MAX. (V^GS= 5.0 V, I^D= 41 A)

• Low C^iss: C^iss= 4400 pF TYP.

• Built-in gate protection diode

(TO-220AB)

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C) ^Note1

Drain Current (Pulse) ^Note2

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

±20

±82

(TO-262)

±300

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Channel Temperature

163

°C

P^T

1.8

Tch

175

Storage Temperature

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

Tstg

–55 to +175

72 / 50 / 17

51 / 250 / 289

I^AS

E^AS

(TO-263)

Notes 1. Calculated constant current according to MAX. allowable channel

temperature.

2. PW ≤ 10 µs, Duty cycle ≤ 1%

3. Starting T^ch= 25°C, V^DD= 28 V, R^G= 25 Ω , V^GS= 20 → 0 V (see Figure 4.)

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Channel to Ambient Thermal Resistance

R^th(ch-C)

0.92

83.3

°C/W

Rth(ch-A)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

The mark ★ shows major revised points.

Document No. D14098EJ5V0DS00 (5th edition)

Date Published December 2002 NS CP(K)

Printed in Japan

1999, 2000

12 3 4 5 6 7 8

中文翻译

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与NP82N055KLE-AY相关器件

型号	品牌	获取价格	描述	数据表
NP82N055KLE-AZ	NEC	获取价格	Power Field-Effect Transistor, 82A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
NP82N055KLE-AZ	RENESAS	获取价格	82A, 55V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
NP82N055KLE-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055KLE-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055MHE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055MHE	RENESAS	获取价格	Product Scout Automotive
NP82N055MHE-S18-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055MLE	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP82N055MLE	RENESAS	获取价格	Product Scout Automotive
NP82N055MLE-S18-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

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