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NP82N055PUG-AY PDF预览

NP82N055PUG-AY

更新时间: 2024-02-01 06:35:15
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
4页 656K
描述
TRANSISTOR,MOSFET,N-CHANNEL,55V V(BR)DSS,82A I(D),TO-263AB

NP82N055PUG-AY 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.76
配置:Single最大漏极电流 (Abs) (ID):82 A
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:175 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):143 W子类别:FET General Purpose Power
表面贴装:YESBase Number Matches:1

NP82N055PUG-AY 数据手册

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