是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.28 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 82 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-263AB | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 270 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NP82N06PDG-E1-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PDG-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 82A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide S |
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NP82N06PDG-E2-AY | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PDG-E2-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PLG | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PLG | RENESAS |
获取价格 |
Product Scout Automotive |
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NP82N06PLG_15 | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PLG-E1-AY | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PLG-E1-AYNote | RENESAS |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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NP82N06PLG-E2-AY | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOS FET |
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