DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82P04PLF
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
LEAD PLATING
Pure Sn (Tin)
PACKING
PACKAGE
NP82P04PLF-E1-AY Note
NP82P04PLF-E2-AY Note
Tape 800 p/reel
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in external electrode.)
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A)
RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A)
• Low input capacitance
Ciss = 5000 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
−40
m20
V
V
m82
A
m246
150
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
PT2
1.8
Tch
175
Storage Temperature
Tstg
−55 to +175
46
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
IAR
EAR
212
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.0
°C/W
°C/W
83.3
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18718EJ2V0DS00 (2nd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.