Datasheet > NP82N10PUF-E2-AY

NP82N10PUF-E2-AY

更新时间： 2024-02-15 06:43:03

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NP82N10PUF-E2-AY 数据手册

Preliminary Data Sheet

R07DS0444EJ0100

Rev.1.00

NP82N10PUF

Aug 26, 2011

MOS FIELD EFFECT TRANSISTOR

Description

The NP82N10PUF is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

•

Super low on-state resistance

⎯ R_DS(on)= 15 mΩ MAX. (V_GS= 10 V, I_D= 41 A)

Low C_iss: C_iss= 2900 pF TYP. (V_DS= 25 V, V_GS= 0 V)

Designed for automotive application and AEC-Q101 qualified

•

Ordering Information

Part No.

NP82N10PUF-E1-AY ^∗

NP82N10PUF-E2-AY ^∗

Lead Plating

Packing

Taping (E1 type)

Taping (E2 type)

Package

Pure Sn (Tin)

Tape 800 p/reel

TO-263 (MP-25ZP)

Note: ^∗1. Pb-free (This product does not contain Pb in the external electrode.)

R07DS0444EJ0100 Rev.1.00

Aug 26, 2011

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