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NP82N055KLE PDF预览

NP82N055KLE

更新时间: 2024-11-27 03:04:07
品牌 Logo 应用领域
日电电子 - NEC 晶体开关晶体管功率场效应晶体管脉冲
页数 文件大小 规格书
10页 218K
描述
MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

NP82N055KLE 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.12Is Samacsys:N
雪崩能效等级(Eas):289 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):82 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):300 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

NP82N055KLE 数据手册

 浏览型号NP82N055KLE的Datasheet PDF文件第2页浏览型号NP82N055KLE的Datasheet PDF文件第3页浏览型号NP82N055KLE的Datasheet PDF文件第4页浏览型号NP82N055KLE的Datasheet PDF文件第5页浏览型号NP82N055KLE的Datasheet PDF文件第6页浏览型号NP82N055KLE的Datasheet PDF文件第7页 
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP82N055ELE, NP82N055KLE  
NP82N055CLE, NP82N055DLE, NP82N055MLE, NP82N055NLE  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.  
<R>  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
NP82N055ELE-E1-AY Note1, 2  
NP82N055ELE-E2-AY Note1, 2  
NP82N055KLE-E1-AY Note1  
NP82N055KLE-E2-AY Note1  
NP82N055CLE-S12-AZ Note1, 2  
NP82N055DLE-S12-AY Note1, 2  
NP82N055MLE-S18-AY Note1  
NP82N055NLE-S18-AY Note1  
TO-263 (MP-25ZJ) typ. 1.4 g  
Tape 800 p/reel  
TO-263 (MP-25ZK) typ. 1.5 g  
Sn-Ag-Cu  
TO-220 (MP-25) typ. 1.9 g  
TO-262 (MP-25 Fin Cut) typ. 1.8 g  
TO-220 (MP-25K) typ. 1.9 g  
TO-262 (MP-25SK) typ. 1.8 g  
Tube 50 p/tube  
Pure Sn (Tin)  
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)  
2. Not for new design  
(TO-220)  
FEATURES  
Channel temperature 175 degree rated  
Super low on-state resistance  
RDS(on)1 = 8.4 mΩ MAX. (VGS = 10 V, ID = 41 A)  
RDS(on)2 = 11 mΩ MAX. (VGS = 5.0 V, ID = 41 A)  
RDS(on)3 = 12 mΩ MAX. (VGS = 4.5 V, ID = 41 A)  
Low input capacitance  
(TO-262)  
Ciss = 4400 pF TYP.  
Built-in gate protection diode  
(TO-263)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14098EJ6V0DS00 (6th edition)  
Date Published October 2007 NS  
Printed in Japan  
1999, 2000, 2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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