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NP82N055CHE-AZ PDF预览

NP82N055CHE-AZ

更新时间: 2024-11-29 13:12:03
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NP82N055CHE-AZ 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
NP82N055EHE, NP82N055KHE  
NP82N055CHE, NP82N055DHE, NP82N055MHE, NP82N055NHE  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.  
<R>  
ORDERING INFORMATION  
PART NUMBER  
LEAD PLATING  
Pure Sn (Tin)  
PACKING  
PACKAGE  
NP82N055EHE-E1-AY Note1, 2  
NP82N055EHE-E2-AY Note1, 2  
NP82N055KHE-E1-AY Note1  
NP82N055KHE-E2-AY Note1  
NP82N055CHE-S12-AZ Note1, 2  
NP82N055DHE-S12-AY Note1, 2  
NP82N055MHE-S18-AY Note1  
NP82N055NHE-S18-AY Note1  
TO-263 (MP-25ZJ) typ. 1.4 g  
Tape 800 p/reel  
TO-263 (MP-25ZK) typ. 1.5 g  
Sn-Ag-Cu  
TO-220 (MP-25) typ. 1.9 g  
TO-262 (MP-25 Fin Cut) typ. 1.8 g  
TO-220 (MP-25K) typ. 1.9 g  
TO-262 (MP-25SK) typ. 1.8 g  
Tube 50 p/tube  
Pure Sn (Tin)  
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)  
2. Not for new design  
(TO-220)  
FEATURES  
Channel temperature 175 degree rated  
Super low on-state resistance  
RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A)  
Low input capacitance  
(TO-262)  
Ciss = 3500 pF TYP.  
Built-in gate protection diode  
(TO-263)  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D14138EJ6V0DS00 (6th edition)  
Date Published October 2007 NS  
Printed in Japan  
1999, 2007  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  

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