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NE3512S02-T1C

更新时间： 2024-01-27 06:35:28
品牌 Logo 应用领域
CEL 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 266K
描述
HETERO JUNCTION FIELD EFFECT TRANSISTOR

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中文翻译

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NE3512S02-T1C 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：LEAD FREE, PLASTIC, MICRO-X-4
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.3Is Samacsys：N
其他特性：LOW NOISE配置：SINGLE
最小漏源击穿电压：3 V最大漏极电流 (ID)：0.015 A
FET 技术：HETERO-JUNCTION最高频带：KU BAND
JESD-30 代码：R-PQMW-F4JESD-609代码：e6
元件数量：1端子数量：4
工作模式：DEPLETION MODE最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：MICROWAVE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.165 W
最小功率增益 (Gp)：12.5 dB认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Bismuth (Sn/Bi)端子形式：FLAT
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
Base Number Matches：1

NE3512S02-T1C 数据手册

 浏览型号NE3512S02-T1C的Datasheet PDF文件第2页浏览型号NE3512S02-T1C的Datasheet PDF文件第3页浏览型号NE3512S02-T1C的Datasheet PDF文件第4页浏览型号NE3512S02-T1C的Datasheet PDF文件第5页浏览型号NE3512S02-T1C的Datasheet PDF文件第6页浏览型号NE3512S02-T1C的Datasheet PDF文件第7页 
4590 Patrick Henry Drive  
Santa Clara, CA 95054-1817  
Telephone: (408) 919-2500  
Facsimile: (408) 988-0279  
Subject: Compliance with EU Directives  
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant  
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous  
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive  
2003/11/EC Restriction on Penta and Octa BDE.  
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates  
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are  
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.  
All devices with these suffixes meet the requirements of the RoHS directive.  
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that  
go into its products as of the date of disclosure of this information.  
Restricted Substance  
per RoHS  
Concentration Limit per RoHS  
(values are not yet fixed)  
Concentration contained  
in CEL devices  
-A  
-AZ  
(*)  
Lead (Pb)  
Mercury  
< 1000 PPM  
< 1000 PPM  
< 100 PPM  
< 1000 PPM  
< 1000 PPM  
< 1000 PPM  
Not Detected  
Not Detected  
Cadmium  
Hexavalent Chromium  
PBB  
Not Detected  
Not Detected  
Not Detected  
Not Detected  
PBDE  
If you should have any additional questions regarding our devices and compliance to environmental  
standards, please do not hesitate to contact your local representative.  
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance  
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information  
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better  
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate  
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL  
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for  
release.  
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to  
customer on an annual basis.  
See CEL Terms and Conditions for additional clarification of warranties and liability.  
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中文翻译

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与NE3512S02-T1C相关器件

型号 品牌 获取价格 描述 数据表
NE3512S02-T1C-A CEL

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 		HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02-T1D CEL

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 		HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02-T1D-A CEL

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 		HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3513M04 CEL

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04 RENESAS

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2 RENESAS

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2 CEL

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2-A CEL

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2B RENESAS

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
NE3513M04-T2B CEL

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 		N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain

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