Datasheet > NE02103

NE02103

更新时间： 2024-09-24 10:27:31

品牌	Logo	应用领域
ASI		晶体晶体管
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描述
NPN SILICON RF TRANSISTOR

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NE02103 数据手册

NE02103

NPN SILICON RF TRANSISTOR

DESCRIPTION:

The ASI NE02103 is Designed for

Oscillator and Amplifier Applications up to

2.0 GHz.

PACKAGE STYLE .100 4LPILL

FEATURES INCLUDE:

• High insertion gain, 18.5 dB at 500 MHz.

• High power gain, 1.5 dB at 500 MHz.

• Low noise figure, 12 dB at 2 GHz.

• For JAN level add sufix D

MAXIMUM RATINGS

70 mA

25 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

12 V

3.0 V

350 mW @ T_A= 25 °C

-65 °C to +200 °C

70 °C/W

T_STG

θ_JC

1 = BASE

2&4 = EMITTER

3 = COLLECTOR

CHARACTERISTICS T_C= 25 °C

SYMBOL

I_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

_CB= 15 V

_EB= 2.0 V

_CE= 10 V

1.0

µA

1.0

I_EBO

h_FE

µA

I_C= 20 mA

250

1.0

---

V_CB= 10 V

f = 1.0 MHz

0.6

C_CB

f_t

_CE= 10 V

I_C= 20 mA

f = 1.0 GHz

f = 0.5 GHz

f = 1.0 GHz

f = 2.0 GHz

f = 0.5 GHz

f = 2.0 GHz

4.5

18.5

GHz

⏐S₂₁⏐²

5.5

6.5

1.5

2.7

V_CE= 10 V

_CE= 10 V

I_C= 3.0 mA

I_C= 5.0 mA

NF_MIN

4.5

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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