Datasheet > NE02103

NE02103

更新时间： 2024-11-10 10:27:31

品牌	Logo	应用领域
ASI		晶体晶体管
页数	文件大小	规格书
1页	34K
描述
NPN SILICON RF TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NE02103 数据手册

NE02103

NPN SILICON RF TRANSISTOR

DESCRIPTION:

The ASI NE02103 is Designed for

Oscillator and Amplifier Applications up to

2.0 GHz.

PACKAGE STYLE .100 4LPILL

FEATURES INCLUDE:

• High insertion gain, 18.5 dB at 500 MHz.

• High power gain, 1.5 dB at 500 MHz.

• Low noise figure, 12 dB at 2 GHz.

• For JAN level add sufix D

MAXIMUM RATINGS

70 mA

25 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

12 V

3.0 V

350 mW @ T_A= 25 °C

-65 °C to +200 °C

70 °C/W

T_STG

θ_JC

1 = BASE

2&4 = EMITTER

3 = COLLECTOR

CHARACTERISTICS T_C= 25 °C

SYMBOL

I_CBO

TEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

_CB= 15 V

_EB= 2.0 V

_CE= 10 V

1.0

µA

1.0

I_EBO

h_FE

µA

I_C= 20 mA

250

1.0

---

V_CB= 10 V

f = 1.0 MHz

0.6

C_CB

f_t

_CE= 10 V

I_C= 20 mA

f = 1.0 GHz

f = 0.5 GHz

f = 1.0 GHz

f = 2.0 GHz

f = 0.5 GHz

f = 2.0 GHz

4.5

18.5

GHz

⏐S₂₁⏐²

5.5

6.5

1.5

2.7

V_CE= 10 V

_CE= 10 V

I_C= 3.0 mA

I_C= 5.0 mA

NF_MIN

4.5

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

中文翻译

下载PDF

与NE02103相关器件

型号	品牌	获取价格	描述	数据表
NE02107	NEC	获取价格	NPN SILICON HIGH FREQUNY TRANSISTOR
NE02107B	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN
NE02107E	NEC	获取价格	暂无描述
NE02108	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 70MA I(C) \| MICRO-X
NE021090-12	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 1.5A I(C) \| RFMOD
NE021091-12	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 18V V(BR)CEO \| 1.5A I(C) \| RFMOD
NE02112	NEC	获取价格	NPN SILICON HIGH FREQUNY TRANSISTOR
NE02130	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C)
NE02130-T1	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili
NE02130-T2	CEL	获取价格	RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili