Datasheet > NE02133-T1B

NE02133-T1B

更新时间： 2024-11-25 22:29:07

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描述
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE02133-T1B 数据手册

NEC's NPN SILICON HIGH

FREQUENCY TRANSISTOR

NE021

SERIES

FEATURES

• HIGH INSERTION GAIN: 18.5 dB at 500 MHz

• LOW NOISE FIGURE: 1.5 dB at 500 MHz

• HIGH POWER GAIN: 12 dB at 2 GHz

• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,

2 GHz Gain Compression

DESCRIPTION

00 (CHIP)

07/07B

NEC's NE021 series of NPN silicon transistors provides eco-

nomical solutions to wide ranges of amplifier and oscillator

problems. Low noise and high current capability provide low

intermodulation distortion. The NE021 series is available as a

chip or in several package styles. The series uses the NEC

gold, platinum, titanium, and platinum-silicide metallization

system to provide the utmost in reliability. NE02107 is avail-

able in both common-base and common-emitter configura-

tions and has been qualified for high-reliability space applica-

tions.

33 (SOT 23 STYLE)

35 (MICRO-X)

NE02135

TYPICAL NOISE PARAMETERS (TA = 25°C)

FREQ.

NFOPT

ΓOPT

(MHz)

(dB)

MAG

ANG

Rn/50

VCE = 10 V, IC = 5 mA

500

1.2

1.5

2.0

2.4

2.6

3.6

3.7

18.60

13.82

11.83

9.36

.36

.31

.50

.44

.52

.68

.71

.14

.12

.05

.06

.10

.14

.21

39 (SOT 143 STYLE)

1000

1500

2000

2500

3000

3500

124

165

-175

-161

-141

-139

NE02139

7.82

TYPICAL NOISE PARAMETERS(TA = 25°C)

7.51

FREQ.

(MHz)

NFOPT

(dB)

ΓOPT

6.31

(dB)

MAG

ANG

Rn/50

VCE = 10 V, IC = 20 mA

500

1.8

1.9

2.4

2.9

3.2

3.9

4.3

21.32

16.15

13.50

11.02

9.12

.16

.33

.46

.53

.57

.62

.67

149

169

.15

.13

.09

.08

.14

.27

.42

500

1.8

2.1

2.3

2.6

17.5

12.5

9.5

0.11

0.27

0.36

0.43

156

168

.20

.16

.18

.21

1000

1500

2000

2500

3000

3500

1000

1500

2000

-179

-167

-154

-139

-134

-156

-147

7.5

8.10

6.48

California Eastern Laboratories

12 3 4 5 6 7...12

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