生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | Is Samacsys: | N |
其他特性: | LOW NOISE, HIGH RELIABILITY | 外壳连接: | EMITTER |
最大集电极电流 (IC): | 0.07 A | 基于收集器的最大容量: | 1 pF |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最高频带: | L BAND | JESD-30 代码: | S-CQMW-F4 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | SQUARE |
封装形式: | MICROWAVE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | QUAD |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NE02107B | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, L Band, Silicon, NPN | |
NE02107E | NEC |
获取价格 |
暂无描述 | |
NE02108 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 70MA I(C) | MICRO-X | |
NE021090-12 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1.5A I(C) | RFMOD | |
NE021091-12 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 1.5A I(C) | RFMOD | |
NE02112 | NEC |
获取价格 |
NPN SILICON HIGH FREQUNY TRANSISTOR | |
NE02130 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 70MA I(C) | |
NE02130-T1 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE02130-T2 | CEL |
获取价格 |
RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Sili | |
NE02132 | NEC |
获取价格 |
NPN SILICON HIGH FREQUNY TRANSISTOR |