Datasheet > NDS9430_02

NDS9430_02

更新时间： 2024-11-15 03:46:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	139K
描述
30V P-Channel PowerTrench MOSFET

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NDS9430_02 数据手册

May 2002

NDS9430

30V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

• –5.3 A, –30 V

R_DS(ON)= 60 mΩ @ V_GS= –10 V

R_DS(ON)=100 mΩ @ V_GS= –4.5 V

• Low gate charge

• Fast switching speed

Applications

• Power management

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Battery protection

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–30

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–5.3

–20

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

NDS9430

13’’

12mm

2500 units

NDS9430 Rev B

2002 Fairchild Semiconductor Corporation

12 3 4 5

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