Datasheet > NDS9430A-F073

NDS9430A-F073

更新时间： 2024-11-15 21:15:31

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Transistor

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NDS9430A-F073 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

NDS9430A-F073 数据手册

December 1997

NDS9430A

Single P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

-5.3A, -20V. R_DS(ON)= 0.05W @ V_GS= -10V

These P-Channel enhancement mode power field effect

transistors are produced using National's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance, provide

superior switching performance, and withstand high energy

pulses in the avalanche and commutation modes. These

devices are particularly suited for low voltage applications such

as notebook computer power management and other battery

powered circuits where fast switching, low in-line power loss,

and resistance to transients are needed.

R_DS(ON)= 0.065W @ V_GS= -6V

R_DS(ON)= 0.09W @ V_GS= -4.5V.

High density cell design for extremely low R_DS(ON).

High power and current handling capability in a widely used

surface mount package.

___________________________________________________________________________________________

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Symbol Parameter

NDS9430A

-20

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

V_DSS

V_GSS

I_D

± 20

(Note 1a)

± 5.3

± 20

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

2.5

1.2

(Note 1c)

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

NDS9430A Rev.A

12 3 4 5 6 7

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