生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.72 | 配置: | SINGLE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (ID): | 42 A |
最大漏源导通电阻: | 0.028 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 100 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP605BEL | NSC |
获取价格 |
暂无描述 | |
NDP605BEL | TI |
获取价格 |
42A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP605BL | NSC |
获取价格 |
TRANSISTOR 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET | |
NDP605BL | TI |
获取价格 |
42A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP6060 | FAIRCHILD |
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N-Channel Enhancement Mode Field Effect Transistor | |
NDP6060 | ONSEMI |
获取价格 |
N 沟道增强型场效应晶体管 60V,48A,25mΩ | |
NDP6060/J69Z | TI |
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48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP6060_NL | FAIRCHILD |
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Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met | |
NDP6060L | FAIRCHILD |
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N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDP6060L | ONSEMI |
获取价格 |
N 沟道逻辑电平增强型场效应晶体管 60V,48A,25mΩ |