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NDP6060

更新时间： 2024-11-09 11:14:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管场效应晶体管
页数 文件大小 规格书
7页 254K
描述
N 沟道增强型场效应晶体管 60V，48A，25mΩ

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中文翻译

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NDP6060 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：0.89雪崩能效等级（Eas）：200 mJ
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (Abs) (ID)：48 A最大漏极电流 (ID)：48 A
最大漏源导通电阻：0.025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：100 W最大脉冲漏极电流 (IDM)：144 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NDP6060 数据手册

 浏览型号NDP6060的Datasheet PDF文件第2页浏览型号NDP6060的Datasheet PDF文件第3页浏览型号NDP6060的Datasheet PDF文件第4页浏览型号NDP6060的Datasheet PDF文件第5页浏览型号NDP6060的Datasheet PDF文件第6页浏览型号NDP6060的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET – N-Channel, Field  
Effect Transistor,  
Enhancement Mode  
V
R
MAX  
I MAX  
D
DSS  
DS(ON)  
60 V  
0.025 mꢀ @ 10 V  
48 A  
D
NDP6060 / NDB6060  
General Description  
These N−Channel enhancement mode power field effect transistors  
are produced using onsemi’s proprietary, high cell density, DMOS  
technology. This very high density process has been especially  
tailored to minimize on−state resistance, provide superior switching  
performance, and withstand high energy pulses in the avalanche and  
commutation modes. These devices are particularly suited for low  
voltage applications such as automotive, DC/DC converters, PWM  
motor controls, and other battery powered circuits where fast  
switching, low in−line power loss, and resistance to transients are  
needed.  
G
S
N−CHANNEL MOSFET  
Features  
G
D
S
• 48 A, 60 V  
TO−220−3LD  
♦ R  
= 0.025 mꢀ @ V = 10 V  
GS  
DS(ON)  
CASE 340AT  
• Critical DC Electrical Parameters Specified at Elevated Temperature  
• Rugged Internal Source−Drain Diode Can Eliminate the Need for an  
External Zener Diode Transient Suppressor  
MARKING DIAGRAM  
• 175°C Maximum Junction Temperature Rating  
• High Density Cell Design for Extremely Low R  
DS(ON)  
XXXXX  
XXXXX  
AYWWZZ  
• TO−220 Package for Both Through Hole and Surface Mount  
Applications  
• This is a Halide Free Device  
XXXX = Specific Device Code  
A
Y
= Assembly Location  
= Year  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Symbol  
Rating  
Drain−Source Voltage  
NDP6060 Unit  
WW = Work Week  
ZZ  
= Assembly Lot Code  
V
DSS  
DGR  
60  
60  
V
V
V
V
Drain−Gate Voltage (R ≤ 1 MΩ)  
GS  
V
GSS  
Drain−Source Voltage  
− Continuous  
ORDERING INFORMATION  
20  
40  
− Nonrepetiti (t < 50 μs)  
p
†
Package  
Device  
Shipping  
I
D
Drain Current  
A
TO−220−3LD  
800 /  
− Continuous  
− Continuous  
− Pulsed  
T
T
= 25°C  
= 100°C  
48  
32  
144  
NDP6060  
C
C
(Halide Free)  
Units / Tube  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
P
Total Power Dissipatiion ꢁ T = 25°C  
100  
0.67  
W
W/°C  
°C  
D
C
− Derate above 25°C  
T ,T  
Operating and Storage Temperature Range  
−65 to 175  
275  
J
STG  
T
Maximum lead temperature for soldering  
purposes, 1/8” from case for 5 seconds  
°C  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2023  
1
Publication Order Number:  
January, 2023 − Rev. 3  
NDP6060/D  
1234567

中文翻译

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与NDP6060相关器件

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NDP6060/J69Z TI

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 		48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP6060_NL FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060L FAIRCHILD

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 		N-Channel Logic Level Enhancement Mode Field Effect Transistor
NDP6060L ONSEMI

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 		N 沟道逻辑电平增强型场效应晶体管 60V，48A，25mΩ
NDP6060L/J69Z TI

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 		48A, 60V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
NDP6060L_NL FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060LJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060LS62Z FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP6060S62Z FAIRCHILD

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 		Power Field-Effect Transistor, 48A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Met
NDP606A NSC

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 		N-Channel Enhancement Mode Power Fleid Effect Transistor

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