Datasheet > NDBA170N06A

NDBA170N06A

更新时间： 2024-10-27 01:21:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	425K
描述
N-Channel Power MOSFET

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数据手册

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NDBA170N06A 数据手册

Ordering number : ENA2250

NDBA170N06A

N-Channel Power MOSFET

60V, 170A, 3.3mΩ, TO-263

http://onsemi.com

Features

• On-resistance R (on)=2.5mΩ(typ.)

Electrical Connection

• Input Capacitance Ciss=15800pF(typ.)

• Halogen free compliance

N-channel

D(2, 4)

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Symbol

Value

Unit

G(1)

Drain to Source Voltage

DSS

Gate to Source Voltage

GSS

S(3)

Drain Current (DC)

170

100

600

Drain Current (DC) Limited by Package

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

Power Dissipation

Tc=25°C

Marking

170N06

150

°C

Junction Temperature

Storage Temperature

LOT No.

Tstg

- 55 to

+150

571

TO-263

CASE 418AJ

Avalanche Energy (Single Pulse) *¹

Avalanche Current *²

Lead Temperature for Soldering

260

°C

Packing Type:TL

Purposes, 3mm from Case for 10 Seconds

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction- to-Case(Drain) Steady State

Junction-to-Ambient *³

1.39

62.5

θJC

°C/W

θJA

Ordering & Package Information

Stresses exceeding Maximum Ratings may damage the device. Maximum

Device

NDBA170N06AT4H

Pb-free and

Package

Shipping

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

800

TO-263

pcs. / reel

Halogen Free

Note : *¹V =36V, L=100μH, I =70A (Fig.1)

*²L≤100μH, Single Pulse

*³Surface mounted on FR4 board using recommended footprint

Semiconductor Components Industries, LLC, 2013

December, 2013

D1113 TKIM TC-00003075 No. A2250-1/6

12 3 4 5 6

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