生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | 外壳连接: | DRAIN |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 40 A | 最大漏源导通电阻: | 0.042 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 150 W | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDB710BE | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDB710BE/L86Z | TI |
获取价格 |
40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
NDB710BEL | TI |
获取价格 |
40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
NDB710BEL/L86Z | TI |
获取价格 |
40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
NDB710BEL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
NDB710BL | TI |
获取价格 |
40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
NDB710BL/L86Z | TI |
获取价格 |
40A, 100V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
NDB710BL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
NDB7112E | NICHIA |
获取价格 |
Blue Laser Diode | |
NDBA116T | NICHIA |
获取价格 |
Blue Laser Diode for External Cavity |