Datasheet > NCEP045N10AG

NCEP045N10AG

更新时间： 2024-10-29 17:00:59

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅栅极
页数	文件大小	规格书
6页	323K
描述
新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超低的导通电阻（RDS(on)）与超低栅极电荷（Qg）的特点，结合先进轻巧紧凑的封装进一步提高了系统的功率密

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NCEP045N10AG 数据手册

NCEP045N10AG

Attention:

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that

require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications

whose failure can be reasonably expected to result in serious physical and/or material damage. Consult

with your NCE power representative nearest you before using any NCE power products described or contained herein in

such applications.

■

NCE power assumes no responsibility for equipment failures that result from using products at values

that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)

listed in products specifications of any and all NCE power products described or contained herein.

■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,

and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,

and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states

that cannot be evaluated in an independent device, the customer should always evaluate and test

devices mounted in the customer’s products or equipment.

■

NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe

design, redundant design, and structural design.

■ In the event that any or all NCE power products(including technical data, services) described or contained herein are

controlled under any of applicable local export control laws and regulations, such products must not be exported without

obtaining the export license from the authorities concerned in accordance with the above law.

■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission

of NCE power Semiconductor CO.,LTD.

■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume

production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied

regarding its use or any infringements of intellectual property rights or other rights of third parties.

■

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power

product that you intend to use.

■

This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

Wuxi NCE Power Co., Ltd

Page6

V1.0

http://www.ncepower.com

1...3 4 56

中文翻译

下载PDF

与NCEP045N10AG相关器件

型号	品牌	获取价格	描述	数据表
NCEP045N10D	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP045N10F	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP045N10G	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP045N10M	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP045N85	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP045N85G	NCEPOWER	获取价格	新洁能正在陆续推出第三代屏蔽栅沟槽型功率MOSFET，相比于上一代产品，第三代产品特征导通
NCEP045N85GU	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP048N72	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP048N85	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超
NCEP048N85D	NCEPOWER	获取价格	新洁能提供击穿电压等级范围为30V至120V的N沟道SGT-II系列功率MOSFET产品超

与NCEP045N10AG相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

12
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

12
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

39
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

NCEP045N10AG

NCEP045N10AG 数据手册

与NCEP045N10AG相关器件

与NCEP045N10AG相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NCEP045N10AG

NCEP045N10AG 数据手册

与NCEP045N10AG相关器件

与NCEP045N10AG相关文章

您还可以找

您在本页遇到什么问题？