NCEP045N10F
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
General Features
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
● VDS =100V,ID =60A
DS(ON)=4.7mΩ , typical@ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
R
RDS(ON) and Qg. This device is ideal for high-frequency switching ● Very low on-resistance RDS(on)
and synchronous rectification.
● 175°C operating temperature
● Pb-free lead plating
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220F
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP045N10F
NCEP045N10F
TO-220F
-
-
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
100
±20
V
V
VDS
VGS
60
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current (Note 1)
ID (100℃)
IDM
42.9
240
A
A
Maximum Power Dissipation
40
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
1.33
871
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.75
℃/W
Wuxi NCE Power Co., Ltd
Page1
V1.0
http://www.ncepower.com