Datasheet > NCEP045N85G

NCEP045N85G

更新时间： 2024-04-09 19:00:10

品牌	Logo	应用领域
新洁能 - NCEPOWER		栅
页数	文件大小	规格书
6页	706K
描述
新洁能正在陆续推出第三代屏蔽栅沟槽型功率MOSFET，相比于上一代产品，第三代产品特征导通电阻降低20%以上，ESD能力、大电流关断能力、短路能力提升10%以上，同时具有更优的EMI特性，可以满足

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NCEP045N85G 数据手册

NCEP045N85G

NCE N-Channel Super Trench II Power MOSFET

Description

The series of devices uses Super Trench II technology that is

General Features

uniquely optimized to provide the most efficient high frequency

switching performance. Both conduction and switching power

losses are minimized due to an extremely low combination of

R_DS(ON)and Q_g. This device is ideal for high-frequency switching

and synchronous rectification.

● V_DS=85V,I_D=110A

R_DS(ON)=3.7mΩ , typical @ V_GS=10V

● Excellent gate charge x R_DS(on)product(FOM)

● Very low on-resistance R_DS(on)

● 150 °C operating temperature

● Pb-free lead plating

Application

● DC/DC Converter

● 100% UIS tested

●Ideal for high-frequency switching and synchronous ● 100% ΔVds tested

rectification

PDFN 5X6-8L

Schematic Diagram

Top View

Bottom View

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

12mm

Quantity

P045N85G

NCEP045N85G

PDFN5x6-8L

Ø330mm

5000units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

VDS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

±20

VGS

110

I_D

I_D(100℃)

I_DM

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

440

Maximum Power Dissipation

120

P_D

Derating factor

0.96

W/℃

℃

Single pulse avalanche energy ^{(Note 1)}

Operating Junction and Storage Temperature Range

E_AS

538

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case

R_θJC

1.04

℃/W

Wuxi NCE Power Co., Ltd

Page1

V1.0

http://www.ncepower.com

12 3 4 5 6

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