NCEP055N10, NCEP055N10D
NCE N-Channel Super Trench II Power MOSFET
Description
The series of devices uses Super Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
General Features
● VDS =100V,ID =110A
RDS(ON)=5.4mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=5.2mΩ , typical (TO-263)@ VGS=10V
R
DS(ON) and Qg. This device is ideal for high-frequency switching
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
and synchronous rectification.
Application
● DC/DC Converter
100% UIS TESTED!
●Ideal for high-frequency switching and synchronous
rectification
100% ∆Vds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
NCEP055N10
NCEP055N10
TO-220
TO-263
-
-
-
-
-
-
NCEP055N10D
NCEP055N10D
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
100
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
V
V
VDS
±20
VGS
110
72
A
ID
Drain Current-Continuous(TC=100℃)
Pulsed Drain Current
ID (100℃)
IDM
A
440
150
1.0
680
A
Maximum Power Dissipation
W
PD
Derating factor
Single pulse avalanche energy (Note 5)
W/℃
mJ
℃
EAS
Operating Junction and Storage Temperature Range
-55 To 175
TJ,TSTG
Wuxi NCE Power Co., Ltd
Page1
V1.0
http://www.ncepower.com