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MTW32N20EG PDF预览

MTW32N20EG

更新时间: 2024-11-23 05:51:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 84K
描述
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247

MTW32N20EG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-247AE包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:6
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):810 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):32 A最大漏极电流 (ID):32 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247AEJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):180 W
最大脉冲漏极电流 (IDM):128 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MTW32N20EG 数据手册

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MTW32N20E  
Preferred Device  
Power MOSFET  
32 Amps, 200 Volts  
N−Channel TO−247  
This advanced Power MOSFET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain−to−source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where  
diode speed and commutating safe operating areas are critical and  
offer additional safety margin against unexpected voltage transients.  
http://onsemi.com  
32 AMPERES, 200 VOLTS  
R
DS(on) = 75 mW  
N−Channel  
D
Features  
Avalanche Energy Specified  
G
Source−to−Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
S
Diode is Characterized for Use in Bridge Circuits  
I  
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
MARKING DIAGRAM  
AND PIN ASSIGNMENT  
Isolated Mounting Hole  
Pb−Free Package is Available*  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4 Drain  
1
Rating  
Drain−Source Voltage  
Symbol  
Value  
200  
200  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
DSS  
Drain−Gate Voltage (R = 1.0 MW)  
V
DGR  
MTW32N20E  
AYWWG  
GS  
TO−247AE  
CASE 340K  
STYLE 1  
Gate−Source Voltage − Continuous  
V
GS  
Drain Current − Continuous  
Drain Current − Continuous @ 100°C  
Drain Current − Single Pulse (t 10 ms)  
I
I
32  
19  
128  
D
D
I
Apk  
p
DM  
1
Gate  
3
Total Power Dissipation  
Derate above 25°C  
P
D
180  
1.44  
W
W/°C  
Source  
2
Operating and Storage Temperature Range T , T  
−55 to 150  
810  
°C  
J
stg  
Drain  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy − Starting T = 25°C  
J
A
Y
= Assembly Location  
= Year  
(V = 50 Vdc, V = 10 Vpk,  
DD  
GS  
I = 32 Apk, L = 1.58 mH, R = 25 W )  
L
G
WW = Work Week  
G
= Pb−Free Package  
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient  
R
R
0.7  
40  
°C/W  
°C  
q
JC  
JA  
q
ORDERING INFORMATION  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
260  
L
Device  
Package  
Shipping  
30 Units/Rail  
30 Units/Rail  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MTW32N20E  
TO−247  
MTW32N20EG  
TO−247  
(Pb−Free)  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 6  
MTW32N20E/D  

MTW32N20EG 替代型号

型号 品牌 替代类型 描述 数据表
MTW32N20E ONSEMI

完全替代

Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
IRFP250NPBF INFINEON

功能相似

HEXFET㈢ Power MOSFET
STW40NF20 STMICROELECTRONICS

功能相似

N-channel 200V - 0.038ヘ -40A- D2PAK/TO-220/TO

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