MTW35N15E

更新时间： 2024-09-29 22:29:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管局域网
页数	文件大小	规格书
8页	172K
描述
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM

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MTW35N15E 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.37
Is Samacsys：	N	外壳连接：	DRAIN
配置：	SINGLE	最小漏源击穿电压：	150 V
最大漏极电流 (Abs) (ID)：	35 A	最大漏极电流 (ID)：	35 A
最大漏源导通电阻：	0.65 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-247AE	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	180 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管元件材料：	SILICON	Base Number Matches：	1

MTW35N15E 数据手册

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by MTW35N15E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

TMOS POWER FET

35 AMPERES

150 VOLTS

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.05 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

CASE 340K–01, Style 1

TO–247AE

and V

Specified at Elevated Temperature

DSS

Isolated Mounting Hole Reduces Mounting Hardware

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–Source Voltage

150

Vdc

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

150

± 20

± 40

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

26.9

105

Adc

Apk

Total Power Dissipation

Derate above 25°C

180

1.45

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

600

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 80 Vdc, V

= 10 Vdc, I = 20 Apk, L = 3.0 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

0.70

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTW35N15E相关器件

型号	品牌	获取价格	描述	数据表
MTW35N15EG	ONSEMI	获取价格	35A, 150V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, GREEN, CASE 340K-01, 3 PIN
MTW36N10E	MOTOROLA	获取价格	Power Field-Effect Transistor, 36A I(D), 100V, 0.058ohm, 1-Element, N-Channel, Silicon, Me
MTW45N10	MOTOROLA	获取价格	TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW45N10E	MOTOROLA	获取价格	TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW4N80	MOTOROLA	获取价格	TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTW4N80E	MOTOROLA	获取价格	TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTW54N05E	MOTOROLA	获取价格	High Energy in the Avalanche and Commutation modes
MTW-5S33	ETC	获取价格	Analog IC
MTW60-51212	TDK	获取价格	15W to 60W Low Profi le Triple Output Power Supplies
MTW60-51212-V	TDK	获取价格	AC-DC Power Factor Correction Module,

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