Datasheet > MTW45N10

MTW45N10

更新时间： 2024-01-11 13:44:26

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	158K
描述
TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM

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MTW45N10 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	配置：	Single
最大漏极电流 (Abs) (ID)：	45 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	180 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

MTW45N10 数据手册

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by MTW45N10E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

TMOS POWER FET

45 AMPERES

100 VOLTS

N–Channel Enhancement–Mode Silicon Gate

This advanced TMOS E–FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain–to–source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

= 0.035 OHM

DS(on)

•

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

CASE 340K–01, Style 1

TO–247AE

and V

Specified at Elevated Temperature

DSS

Isolated Mounting Hole Reduces Mounting Hardware

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–Source Voltage

100

Vdc

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

DGR

100

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

34.6

135

Adc

Apk

Total Power Dissipation

Derate above 25°C

180

1.44

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

810

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 25 Vdc, V

= 10 Vdc, I = 45 Apk, L = 0.8 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

0.70

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTW45N10相关器件

型号	品牌	获取价格	描述	数据表
MTW45N10E	MOTOROLA	获取价格	TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM
MTW4N80	MOTOROLA	获取价格	TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTW4N80E	MOTOROLA	获取价格	TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE
MTW54N05E	MOTOROLA	获取价格	High Energy in the Avalanche and Commutation modes
MTW-5S33	ETC	获取价格	Analog IC
MTW60-51212	TDK	获取价格	15W to 60W Low Profi le Triple Output Power Supplies
MTW60-51212-V	TDK	获取价格	AC-DC Power Factor Correction Module,
MTW60-51215-V	TDK	获取价格	AC-DC Power Factor Correction Module
MTW60-51512-V	TDK	获取价格	AC-DC Power Factor Correction Module
MTW60-51515	TDK	获取价格	15W to 60W Low Profi le Triple Output Power Supplies

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