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MTW7N80E PDF预览

MTW7N80E

更新时间： 2024-01-12 22:28:46
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 224K
描述
TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM

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MTW7N80E 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-247AE
包装说明：CASE 340K-01, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.25
其他特性：AVALANCHE ENERGY RATED雪崩能效等级（Eas）：661 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：800 V最大漏极电流 (ID)：7 A
最大漏源导通电阻：1 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-247AEJESD-30 代码：R-PSFM-T3
JESD-609代码：e0湿度敏感等级：NOT SPECIFIED
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：21 A认证状态：COMMERCIAL
表面贴装：NO端子面层：TIN LEAD
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTW7N80E 数据手册

 浏览型号MTW7N80E的Datasheet PDF文件第2页浏览型号MTW7N80E的Datasheet PDF文件第3页浏览型号MTW7N80E的Datasheet PDF文件第4页浏览型号MTW7N80E的Datasheet PDF文件第5页浏览型号MTW7N80E的Datasheet PDF文件第6页浏览型号MTW7N80E的Datasheet PDF文件第7页 
Order this document  
by MTW7N80E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
7.0 AMPERES  
800 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage–blocking capability without  
degrading performance over time. In addition, this advanced TMOS  
E–FET is designed to withstand high energy in the avalanche and  
commutation modes. The new energy efficient design also offers a  
drain–to–source diode with a fast recovery time. Designed for high  
voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
R
= 1.0 OHM  
DS(on)  
D
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
G
CASE 340K–01, Style 1  
TO–247AE  
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
DSS  
Isolated Mounting Hole Reduces Mounting Hardware  
DS(on)  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
800  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
800  
GS  
Gate–Source Voltage — Continuous  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
7.0  
5.1  
21  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
180  
1.43  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
661  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
=100 Vdc, V  
= 10 Vdc, I = 21 Apk, L = 3.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
0.70  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 3  
Motorola, Inc. 1996  
12345678

中文翻译

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MTW7N80E 替代型号

型号 品牌 替代类型 描述 数据表
2SK2607 TOSHIBA

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