MTW6N100E

更新时间： 2024-09-29 22:14:39

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	198K
描述
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM

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SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

TMOS POWER FET

6.0 AMPERES

1000 VOLTS

N–Channel Enhancement–Mode Silicon Gate

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 1.5 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

CASE 340K–01, Style 1

TO–247AE

•

and V

Specified at Elevated Temperature

DSS

Isolated Mounting Hole Reduces Mounting Hardware

DS(on)

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

1000

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

± 20

± 40

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

6.0

4.2

Adc

Apk

Total Power Dissipation

Derate above 25°C

180

1.43

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

720

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 50 Vdc, V

= 10 Vdc, I = 6.0 Apk, L = 27.77 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

θJC

θJA

0.70

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 3

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7 8

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与MTW6N100E相关器件

型号	品牌	获取价格	描述	数据表
MTW6N100EG	ONSEMI	获取价格	6A, 1000V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, GREEN, CASE 340K-01, 3 PIN
MTW6N60E	MOTOROLA	获取价格	Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
MTW7N80E	MOTOROLA	获取价格	TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
MTW8N50E	MOTOROLA	获取价格	TMOS E FET POWER FIELD EFFECT TRANSISTOR
MTW8N60E	MOTOROLA	获取价格	TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MTW8N60E/D	MOTOROLA	获取价格	TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
MTWA11	Vitec	获取价格	10W Wall Mount Power Supply for I.T. Equipment
MTWA11-S02	Vitec	获取价格	10W Wall Mount Power Supply for I.T. Equipment
MTWA11-S03	Vitec	获取价格	10W Wall Mount Power Supply for I.T. Equipment
MTWA11-S04	Vitec	获取价格	10W Wall Mount Power Supply for I.T. Equipment

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