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MTW32N25E PDF预览

MTW32N25E

更新时间： 2024-11-22 22:29:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管局域网
页数 文件大小 规格书
8页 155K
描述
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM

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MTW32N25E 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.78Is Samacsys：N
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：32 A
最大漏极电流 (ID)：32 A最大漏源导通电阻：0.1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-247AE
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：250 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管元件材料：SILICON
Base Number Matches：1

MTW32N25E 数据手册

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Order this document  
by MTW32N25E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
32 AMPERES  
250 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.08 OHM  
DS(on)  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
•
•
•
Diode is Characterized for Use in Bridge Circuits  
G
CASE 340K–01, Style 1  
TO–247AE  
I
and V  
Specified at Elevated Temperature  
DSS  
Isolated Mounting Hole Reduces Mounting Hardware  
DS(on)  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–Source Voltage  
V
250  
Vdc  
Vdc  
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
250  
GS  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
32  
25  
96  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
250  
2.0  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
J stg  
–55 to 150  
°C  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 100 Vdc, V  
= 10 Vdc, I = 20 Apk, L = 3.0 mH, R = 25 Ω)  
GS L G  
600  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
θJC  
R
θJA  
0.50  
40  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1996  
12345678

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